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| Spintronics at the Atomic Scale | ||||
| A Positive Spin on GaAs Semiconductors | ||||
| Thursday, July 27, 2006 | ||||
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A novel technique developed by our group uses a scanning tunneling microscope (STM) to substitute atoms into a semiconductor
one atom at a time. This technique has been used to assemble a magnetic semiconductor, manganese-doped gallium arsenide
(Ga1-xMnxAs), atom by atom. This work was recently published as the cover article in Nature as a Letter titled, "Atom-by-Atom
Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions." More details about these experiments can be
found under our group's research of Single Spins. Online article coverage: Nature July 27, 2006 — News & Views (pdf), Letter (pdf), & Supplementary Information (pdf) Princeton University Press Release; the University of Iowa Press Release External News Features: www.princeton.edu www.nsf.gov www.nature.com pubs.acs.org www.physorg.com www.sciencedaily.com compoundsemiconductor.net www.eurekalert.org www.eetimes.com www.scienceagogo.com www.photonics.com www.dailyprincetonian.com www.spintroniccomputing.com www.whatsnextnetwork.com www.rdmag.com www.linuxelectrons.com |
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