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What's New? Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1‑xMnxAs Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. We have used scanning tunneling microscopy to visualize electronic states in Ga1‑xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies. Near the Fermi energy, where spectroscopic signatures of electron-electron interaction are the most prominent, the electronic states exhibit a diverging spatial correlation length. Power-law decay of the spatial correlations is accompanied by log-normal distributions of the local density of states and multifractal spatial characteristics. Our method can be used to explore critical correlations in other materials close to a quantum critical point. Published in Science: Report Contact Info Joseph Henry Laboratories of Physics Department of Physics Jadwin Hall Princeton University Princeton, NJ 08544 Tel: 609.258.4390 FAX: 609.258.1006 Lab phone/fax: 609.258.9517